We present a highly efficient method for the high-speed drilling and ablation of semiconductors using long femtosecond laser bursts. Utilizing an industrial grade laser system capable of generating more than 80 pulses per packet at 20 MHz and tunable pulse duration between 200 fs and 20 ps, we achieve significantly enhanced material removal rates that overcome the traditional throughput limitations of ultrafast processing with single pulses or short bursts. Long 20 MHz pulse packets allowed us to utilize up to 60 W average power in an efficient way with a single laser beam. For silicon, we demonstrate that these extended bursts enhance ablation efficiency to levels comparable with reported recently combined MHz/GHz modes, while decreasing drilling time by several times compared to single pulses. Along with burst length we investigated the influence of pulse duration. Applied to silicon carbide (4H-SiC), this extended burst regime produces crackless, high-quality holes and doubled removal rates compared to short bursts. This demonstrates that long MHz bursts drastically improve processing speeds while relying on standard industrial laser modes, thereby eliminating the complexity of the source. The results were obtained using Jasper X1 femtosecond fiber laser (Fluence Technology, Poland) generating 60 W of average power at 1030 nm wavelength.