As Moore's law scaling slows, packaging innovations and advanced integration become crucial, with ultra-short pulse lasers playing a central role in through glass via (TGV) formation and high-density interconnects. Femtosecond laser micromachining with GHz-burst has rapidly emerged as a transformative method for precisely drilling transparent materials and various substrates used in semiconductor manufacturing. It combines sub-micron resolution with reduced thermal damage, enabling controlled energy delivery and precise structuring, which are essential for drilling millions of vias. In this work, we demonstrate the optimisation of percussion drilling processes without post-processing steps to produce high-quality, crack-free vias in glasses (e.g. Fused Silica, Eagle glass, BF33), 4H silicon carbide (SiC), silicon (Si) and multi-stack materials. A new compact femtosecond laser platform with GHz FULL modulation, adjustable intra-burst repetition rates, customisable burst shaping, and real-time control over burst parameters has been used. By adjusting burst profiles and wavelengths, we achieve improved material interaction, higher drilling speeds (60 ms/hole in 1 mm glass and below 10 ms/hole in 500 μm-thick SiC wafers), and crack-free holes in both glass and semiconductor substrates. Experiments were conducted on different types of glasses up to 2 mm thick, 500 μm 4H-SiC wafers, silicon up to 1 mm thick and other multi-stack materials under ambient conditions, utilizing various focusing optics and percussion drilling strategies. Experiments were conducted at the Lithium Lasers Innovation Application Laboratory using the new FEMTOFLASH 70 W laser.