As semiconductor manufacturing technology advances, the potential for improving the performance of semiconductor device through scaling has reached the limit. The demand for high-density integrated and multi-component semiconductors is rising due to the importance of semiconductors in many different industries. Recently, advanced packaging processes have played a key role in enhancing the performance of semiconductors. A crucial aspect of advanced packaging is the precise separation of thick wafers into defect-free chips. Laser dicing, a non-contact dry separation, has emerged as an essential technology for this purpose. While extensive research has focused on laser dicing of thin wafers (< 500 μm), studies on full-thickness wafer laser dicing processes are very limited. This study aims to investigate the dicing process of a full-thickness Si wafer using a nanosecond pulsed laser. P-type Si (100) wafers with a thickness of 720 μm were used. The wavelengths of the laser beam were 1064 and 1550 nm, the pulse width range was 10–350 ns, and the pulse repetition rate range was 66–2000 kHz, respectively. Diverse process conditions, including pulse width, pulse repetition rate, and pulse energy, were explored to reduce defects in laser-material interactions. In addition, the microcrack formation mechanism, which directly contributes to wafer dicing, was investigated through morphological and microstructural characteristics of the diced wafer.