The increasing demand for miniaturization in electronics has driven the need for advanced fabrication techniques capable of producing through-glass vias (TGVs) with high precision, minimal spacing, and low defect rates. Ultrafast laser-based methods, particularly laser drilling and selective laser etching (SLE), have emerged as critical technologies in the fabrication of TGVs for 3D microchip stacking. Glass offers superior electrical properties, such as reduced signal loss, improved thermal stability and mechanical strength compared to traditional materials like silicon. This study presents advancements in ultrafast laser drilling techniques for TGV fabrication. We demonstrate the feasibility of taper-free fabrication of high-aspect-ratio holes, addressing a common challenge in traditional ablation-based drilling methods. By controlling laser parameters and employing optimized processing strategies, we achieve uniform hole diameters below 100 um, reaching an aspect ratio of 1:20 without chemical etching. Our research focuses on process speed optimization to enhance fabrication efficiency. Moreover, we demonstrate a high aspect ratio and high-speed percussion drilling of through holes for the glass substrates thicker than 0.5 mm. The results were obtained using <200 uJ ultrashort pulses at 1030 nm wavelength (Jasper X0, Fluence, Poland). Our findings highlight the remarkable capabilities of ultrafast laser drilling for TGV fabrication for new microchip generation.