Atomically-thin transition metal dichalcogenides (TMDCs) have recently emerged as important candidates for future electronic, optoelectronic, and photonic applications due to their extraordinary electrical and optical and properties. These advantages have significantly persuaded the scientific community to innovate novel synthesis and processing methods for high-quality and large-area growth of such 2D materials on various substrates. Among these efforts, chemical vapor deposition has been the most used technique that shows some promises toward the synthesis of high-quality crystals. However, uncontrolled gas-phase reactions and intricate growth dynamics of such multi-component materials in a CVD system are the limiting factors in this method. Here we introduce a novel gas-phase synthesis method, which is mainly based on the direct vaporization of the stoichiometric powders by a CO₂ laser in an argon environment. Two key advantages of this method are the use of stoichiometric powders as precursors, as well as decoupling the growth and evaporation mechanisms in the system. This method significantly reduces the existing growth complexities and remarkably accelerates the growth of numerous 2D materials, including MoS₂, MoSe₂, WSe₂, and WS₂. Notably, this laser-assisted synthesis method developed a universal guideline to synthesize other 2D materials, which will further accelerate the discovery of emerging quantum materials.