Silicon Carbide (SiC) materials are increasingly used in electronics applications requiring high and dynamic voltage, current, and switching.  Largely driven by increased adoption of electric vehicles, additional markets include photovoltaics, LED lighting, and general power storage and transmission. In these and other areas, manufacturers are finding traditional silicon substrates unsuitable for the rigors of high-power electronics, and SiC is increasingly the answer. However, the high hardness and brittleness of SiC makes it difficult to process with conventional mechanical methods and therefore non-contact laser processing is being adopted. But laser selection is not necessarily straightforward, as dissociation of silicon and carbon is known to occur at relatively low temperatures.  Hence, it is useful to consider both ultrashort pulse (USP) and more conventional nanosecond (ns) pulse laser processing. In this work, we present various results using high power USP and ns lasers for processing crystalline 4H SiC wafers.  Ablation thresholds and material removal efficiencies are determined, and the effects of using tailored burst output is explored. We find that using pulse bursts can strongly improve machining quality as well as increase throughput, with volume ablation rates approaching 50 µm³/min.  Analysis includes optical microscopy as well as scanning white light interferometry for depth measurement and surface quality characterization.