In this study, laser doping of n-type 4H-SiC with boron for mid-wave infrared (MWIR) optical properties is reported. A novel doping technique based on a pulsed Nd:YAG laser (1064 nm) for doping silicon carbide (SiC) was developed. An aqueous boric acid (H 3 BO 3 ) solution was utilized as a precursor to facilitate p-type doping in 4H-SiC. FTIR spectrometry was used to characterize the optical properties of the as-received and boron-doped samples within the MWIR range. The boron dopant created an acceptor energy level at (E v + 0.29 eV) within the bandgap of 4H-SiC, corresponding to 4.3 µm wavelength. Upon absorption of photons of this wavelength by the boron-doped 4H-SiC, the electron densities in valence and acceptor energy levels were altered, resulting in a change in the refraction index of the 4H-SiC substrate. A theoretical heat transfer model was devised to establish a correlation between laser processing parameters and various other factors that impact the effectiveness of the laser doping process. These factors include the laser-substrate interaction time, minimum dopant diffusion time, dopant concentration in precursor solution and dopant concentration diffused into the substrate. To ensure a thorough analysis, a comprehensive investigation was carried out on the as-received and boron-doped samples, encompassing a careful examination of their optical properties for the MWIR wavelength range. The laser doping process resulted in a notable decrease in the refraction index from 2.873 to 2.517. Our experimental results aligned with the theoretical model developed for selecting the laser processing parameters, affirming its success.