Femtosecond laser dicing with GHz-burst has rapidly emerged as a transformative method for precisely dicing various substrates used in semiconductor manufacturing. It combines sub-micron resolution with reduced thermal damage, enabling controlled energy delivery and improved material response. In this work, we demonstrate the optimisation of dicing processes to produce high-quality free-forms in 4H silicon carbide (SiC) and silicon (Si) wafers, as well as in different multitask materials. A new compact femtosecond laser platform with GHz FULL modulation, intra-burst repetition rates, customisable burst shaping, and real-time control over burst parameters has been used. All this flexibility is crucial for adapting to diverse material properties used in the semiconductor industry. Both infrared (1030 nm) and green wavelength (515 nm) are investigated to fully exploit the different industrial needs. The presented study highlights the importance of the pulse number in the burst, in combination with the galvo scan speed, during the dicing process to minimize recast. Moreover, the number of pulses plays a fundamental role in maximizing the ablation rate. Our experimental results confirm that precise GHz-burst control enables clean, reproducible dicing with increased drilling throughput (200 mm/s for a 350 μm-thick SiC wafer and up to 1mm of Si). Experiments were conducted at the Lithium Lasers Innovation Application Laboratory using the new FEMTOFLASH 70W laser.